DURHAM, USA: In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree Inc. announced a new family of 50A Silicon Carbide (SiC) devices, including the industry’s first 1700V Z-FET SiC MOSFET.

These new 50A SiC devices, which also include a 1200V Z-FET SiC MOSFET and three Z-Rec SiC Schottky diodes, will enable a new generation of power systems with record-setting energy efficiency and lower cost of ownership than with conventional technologies.

The new devices, available in die form, are designed for high-power modules for applications such as solar power inverters, uninterruptible power supply (UPS) equipment and motor drives. Using the Cree SiC 50A devices, power electronics engineers can set new standards for system cost of ownership through reduced size, lower-cost bill of materials (BOM), and improved efficiency.

“Only Cree has the relentless innovation and expertise across SiC materials technology, wafer processing and device design to make this kind of technology possible,” said Cengiz Balkas, VP and GM, Cree power and RF. “These larger die extend the benefits realized with our 20 Amp SiC MOSFETs to power applications up to 500 kW, making it possible to replace less capable conventional silicon IGBTs in high-power, high-voltage applications.”

These higher-rated SiC devices continue a long history of Cree SiC technology innovation firsts, including the industry’s first 1200V SiC MOSFET and the first production 1200V and 1700V SiC Schottky diodes.

The comprehensive 50A SiC device series includes a 40 mOhm 1700V MOSFET, a 25 mOhm 1200V MOSFET and 50A/1700V, 50A/1200V, and 50A 650V Schottky diodes. Samples of all these high-power devices are available immediately, with production volumes targeted for fall 2012. Preliminary datasheets are available upon request for samples in die form.

BOSTON, USA: As the LED market faces the challenges of softening demand, reduced government subsidies and rapidly declining pricing, manufacturers must investigate new techniques to improve cost structure.

Most of the LEDs currently produced use a Gallium Nitride (GaN)-on-sapphire manufacturing process. The Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) viewpoint, “Compound Semiconductor Industry Review February 2012: Optoelectronics, Materials and Equipment” provides details of two companies that have purchased equipment from Veeco Instruments to develop less costly GaN-on-silicon fabrication processes, SemiLEDS and Epistar. The report also captures announcements for companies such as Soitec, AIXTRON, AXT, Hitachi Cable, JDSU, Sharp, Furukawa, Finisar, Oclaro, Emcore, GigOptix, IQE and Avago Technologies.

“Gallium Nitride is creating a lot of product and process development activity across a number of RF, power electronics and LED markets,” observed Eric Higham, director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. “The goal is to find lower cost ways to manufacture LEDs. For some manufacturers, that means replacing sapphire with silicon.”

Asif Anwar, director, Strategy Analytics Strategic Technologies Practice added, “While there are many processing challenges that remain to be solved, we are also seeing some very interesting product results from companies like Nitronex, EPC and International Rectifier for applications in the RF and high power electronics markets.”

LIGHTFAIR International 2012, DURHAM, USA: Cree Inc. has introduced a six-inch LED architectural luminaire, extending its family of the world’s most efficient downlights.

Featuring modern design, high color quality and double the efficacy of fluorescent technology, the revolutionary SR Series LED Architectural Downlight uses 85 percent less energy and is designed to last up to 30 times longer than comparable incandescent lighting. Priced at par with incumbent fluorescent architectural downlights, the new SR Series provides instant payback while delivering breakthrough performance.

Increasingly strict energy codes and LEED certification for buildings are significantly decreasing the energy density (measured in watts per square foot) that can be used for lighting. These stringent codes often restrict lighting options, which can compromise the overall aesthetics of a building’s design. The SR Series offers significant opportunities to reduce power consumption and operating expenses for end-users, while providing exceptional aesthetic qualities.

“With the SR Series, the high quality LED light you expect from Cree comes in a package that you would expect from an architectural-grade lighting manufacturer and at a price point consistent with the industry,” said Leah Robinson, lighting designer at Affiliated Engineers Inc. “Plus, its high efficacy and color consistency allows designers to put more thought into the details of their design and feel confident in the quality of their downlighting solutions.”

The SR Series introduces the new, innovative Cree Light Source-Reflector Unity Optical system. Specifically designed with the end application in mind, the reflectors virtually eliminate glare and distracting optical reflections for projects that require the most refined aperture appearance and brightness control. Featuring award-winning Cree TrueWhite Technology, the SR Series delivers industry-leading color quality and specifically tuned color points (3000K, 3500K and 4000K). The downlights deliver light with a CRI >90 and are designed to last at least 75,000 hours and feature a five-year warranty.

“The SR6 is the industry’s best downlight and extends Cree’s leadership in LED-based indoor lighting,” said Christopher Ruud, VP, global sales, Cree lighting. “It offers superior efficacy, improved color quality and exceptional aperture aesthetics, all for the same price as a CFL equivalent.”

Cree SR Series LED Architectural Downlight is sold through Cree lighting sales channels with sample quantities targeted for availability in June 2012.

LIGHTFAIR International 2012, DURHAM, USA: Cree Inc. has introduced the industry’s first LED downlight designed to deliver specification-grade lighting performance with pricing to match the everyday price of incumbent technology fluorescent grade downlights. With initial models designed to replace 18 and 26 watt fluorescent downlights, the KR Series is at least 35 percent more efficient than incumbent fluorescents and is designed to last up to five times longer.

“The innovative Cree KR Series truly goes head-to-head with the initial cost of fluorescent downlights,” said Christopher Ruud, VP, global sales, Cree lighting. “When you factor in the increased energy savings, long lifetime and aesthetic appeal, it leaves us wondering why anyone would ever specify a CFL downlight again.”

Designed for new construction, the new cost-effective six-inch downlight features line voltage dimming to five percent, as well as multiple color point, light output and specification-grade reflector options. The KR Series features Cree TrueWhite Technology – a revolutionary way to generate white light with LEDs. Cree TrueWhite Technology delivers high efficiency with beautiful light characteristics, while maintaining color consistency over the rated lifetime of the product.

The new downlight is available in 2700K, 3000K and 3500K color temperatures, all with 90 CRI to enable beautiful, efficient, color effective light. Designed to last 50,000 hours, the KR Series features a five-year warranty.

ORLANDO, & DULLES, USA: Micross Components, a global provider of distributed and specialty electronic components, and GeneSiC Semiconductor, a pioneer and world leader in Silicon Carbide (SiC) technology, announced an agreement establishing Micross as an authorized supplier of GeneSiC’s bare die products worldwide.

The driving force behind the agreement is the shared commitment of both companies to increase the availability of SiC bare die to industrial, military, aerospace, and energy (particularly, drilling and exploration) customers.

For years, Silicon has been the building block of semiconductor design and fabrication because of its natural abundance, processing ease and relatively useful, although limited, temperature range. SiC, which is a manmade compound, offers enhanced performance, a broader temperature range, greater reliability, and natural radiation resistance.

Until recently, challenges and costs associated with SiC production had limited its use among semiconductor manufacturers, but GeneSiC, with its design and fabrication advances, has successfully increased yields. This has resulted in more competitive pricing and offerings, such as GeneSiC’s Schottky diodes, which offer significant design and performance advantages.

Extending those advantages to bare die customers will be Micross’ role under the new agreement. As the leading independent distributor of die products worldwide, Micross has both the product and assembly expertise required to certify the GeneSiC bare die for high-temp/high-reliability applications, as well as the sales channels needed to reach potential customers around the globe. Further, with its technical knowledge and resources, Micross can provide long-term product support to all die customers.

“This agreement is a natural fit,” says GeneSiC’s chief business development officer, Michael DiGangi. “With Micross’ marketing and product support, we can confidently grow this part of our business, knowing that our die customers will be served in a manner second to none.”

Tony Hamby, Micross’ GM for Die Distribution in the US, shares DiGangi’s enthusiasm for the new relationship and explains, “Having GeneSiC as a technology partner will be a great advantage for our customers, who, by virtue of their specialty applications, are always pushing performance limits, just like GeneSiC.”